The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Aug. 23, 2022
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Hayato Iga, Tokyo, JP;

Kazuya Hirata, Tokyo, JP;

Shunichiro Hirosawa, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/53 (2014.01); B23K 26/00 (2014.01); B23K 26/03 (2006.01); B23K 101/40 (2006.01); B23K 103/00 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
B23K 26/53 (2015.10); B23K 26/0006 (2013.01); B23K 26/032 (2013.01); H01L 21/78 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08);
Abstract

A monocrystalline silicon wafer fabricated such that a particular crystal plane, e.g., a crystal plane (100), included in crystal planes {100} is exposed on each of face and reverse sides of the monocrystalline silicon wafer is irradiated with a laser beam along a first direction parallel to the particular crystal plane and inclined to a particular crystal orientation, e.g., a crystal orientation [010], included in crystal orientations <100> at an angle of 5° or less, thereby forming a peel-off layer that functions as separation initiating points between a part of the monocrystalline silicon wafer that belongs to the face side thereof and a part of the monocrystalline silicon wafer that belongs to the reverse side thereof.


Find Patent Forward Citations

Loading…