The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Aug. 27, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Hui-Lin Wang, Taipei, TW;
Po-Kai Hsu, Tainan, TW;
Hung-Yueh Chen, Hsinchu, TW;
Yu-Ping Wang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H10B 61/00 (2023.02);
Abstract
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a cap layer adjacent to and directly contacting the MTJ, a first inter-metal dielectric (IMD) layer around the MTJ, a top electrode on the MTJ, a metal interconnection under the MTJ, and a second IMD layer around the metal interconnection. Preferably, the cap layer is a single layer structure made of dielectric material and an edge of the cap layer contacts the first IMD layer directly.