The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Jun. 17, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Beijing Superstring Academy of Memory Technology, BeiJing, CN;
Kanyu Cao, Hefei, CN;
Xiaoguang Wang, Hefei, CN;
Huihui Li, Hefei, CN;
Dinggui Zeng, Hefei, CN;
Jiefang Deng, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, Beijing, CN;
Abstract
A method for manufacturing a semiconductor structure, a semiconductor structure and a semiconductor memory are provided. The method includes: providing a substrate; forming an MTJ structure and a first mask structure sequentially on the substrate; patterning the first mask structure to form a first pattern extending in a first direction; forming a second mask structure on the first pattern; patterning the second mask structure to form a second pattern extending in a second direction, in which the first direction intersects the second direction, and is not perpendicular to the second direction; patterning the first pattern by utilizing the second pattern to form a cellular pattern; and transferring the cellular pattern to the MTJ structure to form a cellular MTJ array.