The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Jan. 04, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Pei-Yu Chou, Hsinchu County, TW;
Tze-Liang Lee, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/76 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 62/115 (2025.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 62/149 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01);
Abstract
A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate, an interlayer dielectric (ILD), and a conductive layer. The ILD is disposed on the substrate. The conductive layer is disposed on the substrate and spaced apart from the ILD by an air gap. The ILD is tapered toward the substrate.