The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Jun. 24, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hung-Li Chiang, Taipei, TW;
Yu-Chao Lin, Hsinchu, TW;
Chao-Ching Cheng, Hsinchu, TW;
Tzu-Chiang Chen, Hsinchu, TW;
Tung-Ying Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first nanostructure over the substrate. The semiconductor device structure includes a gate stack over the substrate and surrounding the first nanostructure. The semiconductor device structure includes a first source/drain structure and a second source/drain structure over the substrate. The gate stack is between the first source/drain structure and the second source/drain structure. The semiconductor device structure includes an inner spacer layer covering a sidewall of the first source/drain structure and partially between the gate stack and the first source/drain structure. The first nanostructure passes through the inner spacer layer. The semiconductor device structure includes a dielectric structure over the gate stack and extending into the inner spacer layer. The dielectric structure covers a top surface, an inner wall, and a lower surface of the inner spacer layer.