The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Feb. 20, 2022
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yu-Jen Yeh, Taichung, TW;

Hung-Hsun Shuai, Tainan, TW;

Chih-Jung Chen, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/35 (2023.01); H10B 41/60 (2023.01); H10D 30/01 (2025.01); H10D 30/68 (2025.01);
U.S. Cl.
CPC ...
H10B 41/35 (2023.02); H10B 41/60 (2023.02); H10D 30/0411 (2025.01); H10D 30/6892 (2025.01);
Abstract

A memory cell includes a substrate, a floating gate on the substrate, a control gate on the floating gate, a first dielectric layer between the floating gate and the control gate, an erase gate merged with the control gate and disposed on a first sidewall of the floating gate, a second dielectric layer between the floating gate and the erase gate, a select gate on an opposite second sidewall of the floating gate, a spacer between the select gate and the control gate and between the select gate and the floating gate, a source doping region in the substrate and adjacent to the first sidewall of the floating gate, and a drain doping region in the substrate and adjacent to the select gate.


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