The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

May. 19, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Li Ding, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 20/25 (2023.01); H01L 23/525 (2006.01); H01L 23/535 (2006.01); H10B 20/00 (2023.01);
U.S. Cl.
CPC ...
H10B 20/25 (2023.02); H01L 23/5252 (2013.01); H01L 23/535 (2013.01); H10B 20/38 (2023.02);
Abstract

A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes: a substrate including a first doped region; a first isolation structure located in the first doped region, a depth of the first isolation structure being greater than that of the first doped region; a first gate structure located on the surface of the substrate of the first doped region and spanning the first isolation structure, a projection width of the first gate structure on the substrate being larger than that of the first isolation structure on the substrate; and second gate structures located on the surface of the substrate and at both sides of the first gate structure.


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