The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Aug. 01, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Youming Liu, Hefei, CN;

Deyuan Xiao, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02);
Abstract

The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; a memory cell array, located on the substrate, the memory cell array includes a plurality of transistor units, each of the transistor units includes a first transistor and a second transistor extending along a first direction and electrically connected to each other, and the first direction is parallel to the substrate; a first bit line, penetrating the memory cell array and electrically connected to the first transistor; a second bit line, penetrating the memory cell array and electrically connected to the second transistor; a first word line, electrically connected to the first transistor; and a second word line, electrically connected to the second transistor.


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