The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Feb. 16, 2021
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Yumi Fukuda, Setagaya, JP;
Koichi Harada, Bunkyo, JP;
Kenji Essaki, Kawasaki, JP;
Yasushi Hattori, Kawasaki, JP;
Yasuhiro Goto, Minato, JP;
Keiko Albessard, Yokohama, JP;
Maki Yonetsu, Mitaka, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); C04B 35/597 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); C04B 35/597 (2013.01); C04B 2235/3873 (2013.01);
Abstract
According to one embodiment, a structure according to the embodiment includes a β type silicon nitride type crystal phase and a YSiONtype crystal phase. In an X-ray diffraction pattern according to a θ-2θ method of the structure, a ratio of a second peak intensity being maximum and appearing at 2θ=31.93±0.1° with respect to a first peak intensity being maximum and appearing at 2θ=27.03±0.1° is 0.005 or more and 0.20 or less.