The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Jul. 20, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/02 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); H01L 21/02274 (2013.01); H01L 21/486 (2013.01); H01L 21/56 (2013.01); H01L 22/32 (2013.01); H01L 23/3171 (2013.01); H01L 23/528 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/0652 (2013.01); H01L 2224/08146 (2013.01);
Abstract
A semiconductor die includes an interconnection structure, conductive pads, a first passivation layer, and a second passivation layer. The conductive pads are disposed over and electrically connected to the interconnection structure. The first passivation layer and the second passivation layer are disposed over the conductive pads. The second passivation layer includes a first portion located between two adjacent conductive pads, and a width of the first portion of the second passivation layer continuously decreases toward the interconnection structure.