The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Jan. 09, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Po-Chun Liu, Hsinchu, TW;
Chung-Chieh Hsu, Hsinchu, TW;
Chi-Ming Chen, Hsinchu, TW;
Chung-Yi Yu, Hsinchu, TW;
Chen-Hao Chiang, Hsinchu, TW;
Min-Chang Ching, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A high electron mobility transistor (HEMT) includes a substrate; and a first semiconductor layer over the substrate. The HEMT further includes a second semiconductor layer over the first semiconductor layer, wherein the second semiconductor layer has a band gap discontinuity with the first semiconductor layer, and at least one of the first semiconductor layer or the second semiconductor layer comprises indium. The HEMT further includes a top layer over the second semiconductor layer. The HEMT further includes a gate electrode over the top layer. The HEMT further includes a source and a drain on opposite sides of the gate electrode, wherein the top layer extends continuously from below the source, below the gate electrode, and to below the drain.