The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Apr. 27, 2020
Soochow University, Suzhou, CN;
SOOCHOW UNIVERSITY, Suzhou, CN;
Abstract
The present invention provides use of an ionization radiation source in preparation of a porous crystalline material, and a method for preparing a MOFs material and a COFs material. In the present invention, the ionization radiation source is used for preparing the porous crystalline material; under the irradiation of the ionization radiation source, the porous crystalline material (MOFs, COFs) can be synthesized in an extremely short time, wherein the ionization radiation source is used for providing energy required in a reaction for preparing the porous crystalline material. The preparation process does not need heating, so that energy consumption is reduced and a high-pressure system is avoided. The aforementioned preparation method is simple, low in instrument and equipment cost, and thus is a environmentally friendly and extremely low-cost synthesis method.