The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Sep. 23, 2021
Applicant:
Asmpt Singapore Pte. Ltd., Singapore, SG;
Inventors:
Ruslan Rifovich Subkhangulov, Nijmegen, NL;
Paul Christiaan Verburg, Nijmegen, NL;
Denis Danisovich Arslanov, Utrecht, NL;
Roman Urs Doll, Nijmegen, NL;
Assignee:
ASMPT SINGAPORE PTE. LTD., , SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/364 (2014.01); B23K 26/06 (2014.01); B23K 26/064 (2014.01); B23K 26/38 (2014.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
B23K 26/364 (2015.10); B23K 26/064 (2015.10); B23K 26/0643 (2013.01); B23K 26/38 (2013.01); B23K 2103/56 (2018.08);
Abstract
A method of cutting a semiconductor wafer by selectively controlling and utilising the polarization of incident laser beam or beams that includes irradiating the semiconductor wafer with laser light having a first polarization state, and subsequently irradiating the semiconductor wafer with laser light having a second polarization state, the second polarization state being different from the first polarization state.