The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Jan. 07, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yi Ching Ong, Hsinchu, TW;

Kuen-Yi Chen, Hsinchu, TW;

Yi-Hsuan Chen, Taoyuan, TW;

Kuo-Ching Huang, Hsinchu, TW;

Harry-Hak-Lay Chuang, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/538 (2006.01); H01M 10/05 (2010.01); H01M 50/11 (2021.01); H10D 84/40 (2025.01);
U.S. Cl.
CPC ...
H10D 84/40 (2025.01); H01L 23/49593 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01);
Abstract

The present disclosure relates to an integrated chip including a first metal layer over a substrate. A second metal layer is over the first metal layer. An ionic crystal layer is between the first metal layer and the second metal layer. A metal oxide layer is between the first metal layer and the second metal layer. The first metal layer, the second metal layer, the ionic crystal layer, and the metal oxide layer are over a transistor device that is arranged along the substrate.


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