The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Mar. 30, 2022
Applicants:
Stmicroelectronics France, Montrouge, FR;
Stmicroelectronics International N.v., Geneva, CH;
Inventors:
Matthieu Nongaillard, Grenoble, FR;
Thomas Oheix, Grenoble, FR;
Assignees:
STMicroelectronics France, Montrouge, FR;
STMicroelectronics International N.V., Geneva, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 80/20 (2025.01); H01L 25/07 (2006.01); H10D 30/47 (2025.01);
U.S. Cl.
CPC ...
H10D 80/251 (2025.01); H01L 25/074 (2013.01); H10D 30/471 (2025.01);
Abstract
The disclosure concerns an electronic device provided with two high electron mobility transistors stacked on each other and having in common their source, drain, and gate electrodes. For example, each of these electrodes extends perpendicularly to the two transistors. For example, the source and drain electrodes electrically contact the conduction channels of each of the transistors so that said channels are electrically connected in parallel.