The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Feb. 26, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chao-Hsuan Chen, Hsinchu, TW;

Ming-Chia Tai, Zhubei, TW;

Yu-Hsien Lin, Kaohsiung, TW;

Shun-Hui Yang, Jungli, TW;

Ryan Chia-Jen Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 21/28 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 64/66 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 30/024 (2025.01); H01L 21/28088 (2013.01); H10D 30/6211 (2025.01); H10D 64/015 (2025.01); H10D 64/017 (2025.01); H10D 64/667 (2025.01); H10D 84/0158 (2025.01); H10D 84/834 (2025.01); H10D 64/021 (2025.01);
Abstract

A method includes fabricating a semiconductor device, wherein the method includes depositing a coating layer on a first region and a second region under a loading condition such that a height of the coating layer in the first region is greater than a height of the coating layer in the second region. The method also includes applying processing gas to the coating layer to remove an upper portion of the coating layer such that a height of the coating layer in the first region is a same as a height of the coating layer in the second region.


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