The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Nov. 24, 2023
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Sai-Hooi Yeong, Hsinchu County, TW;
Chih-Yu Chang, New Taipei, TW;
Chun-Yen Peng, Hsinchu, TW;
Chi On Chui, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure and manufacturing method thereof are provided. The semiconductor structure includes a substrate and a metallization structure over the substrate. The metallization structure includes a MIM structure, a first contact and a second contact. The MIM structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, and a top electrode layer on the ferroelectric layer. The ferroelectric layer is substantially made of lead zirconate titanate (PZT), BaTiO(BTO), or barium strontium titanate (BST), and a thickness of the ferroelectric layer is greater than a thickness of the dielectric layer.