The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Mar. 09, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Meng-Han Lin, Hsinchu, TW;
Chia-En Huang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A memory device includes two word-line electrodes, two source-line electrodes, and two data storage features for use by four memory cells, which are referred to as first, second, third and fourth memory cells. One word-line electrode is common to the first and second memory cells, and the other word-line electrode is common to the third and fourth memory cells. One source-line electrode is common to the first and second memory cells, and the other source-line electrode is common to the third and fourth memory cells. One data storage feature is common to the first and third memory cells, and the other data storage feature is common to the second and fourth memory cells.