The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Jul. 28, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Pei-Yu Wang, Hsinchu, TW;
Wei Ju Lee, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/02532 (2013.01); H01L 21/30604 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/42392 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device includes a substrate, nanostructures vertically suspended above the substrate, a metal gate structure wrapping each of the nanostructures, an epitaxial feature having a first sidewall in physical contact with end portions of the nanostructures, and an air gap disposed between the epitaxial feature and the metal gate structure. The air gap exposes the first sidewall of the epitaxial feature and the end portions of the nanostructures.