The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Nov. 17, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsiao-Chun Chang, Hsinchu, TW;
Guan-Jie Shen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a semiconductor device with counter-doped nanostructures and a method for forming the semiconductor device. The method includes forming a fin structure on a substrate, the fin structure including one or more first-type nanostructures and one or more second-type nanostructures. The method further includes forming a polysilicon structure over the fin structure and forming a source/drain (S/D) region on a portion of the fin structure and adjacent the polysilicon structure, the S/D region including a first dopant. The method further includes doping the one or more second-type nanostructures with a second dopant via a space released by the polysilicon structure and the one or more first-type nanostructures, where the second dopant is opposite to the first dopant. The method further includes replacing portions of the one or more doped second-type nanostructures with additional second-type nanostructures.