The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Sep. 13, 2021
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Tomoko Matsudai, Tokyo, JP;

Yoko Iwakaji, Tokyo, JP;

Hiroko Itokazu, Kawasaki Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/868 (2006.01); H03K 17/0812 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0727 (2013.01); H01L 29/063 (2013.01); H01L 29/7397 (2013.01); H01L 29/868 (2013.01); H03K 17/08128 (2013.01);
Abstract

A semiconductor device of embodiments includes: a semiconductor layer including a first trench, a second trench, a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type provided between a first face and the first semiconductor region, between the first trench and the second trench, and in contact with the second trench, a third semiconductor region of a first conductive type provided between the first trench and the second semiconductor region, a fourth semiconductor region of a second conductive type provided between the third semiconductor region and the first face, and a fifth semiconductor region of a second conductive type provided between the second semiconductor region and the first face, spaced from the fourth semiconductor region, in contact with the second trench; a first electrode on a first face side; and a second electrode on a second face side.


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