The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Jan. 21, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Chia Hu, Taipei, TW;

Ming-Fa Chen, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/02206 (2013.01); H01L 2224/03011 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80007 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/37001 (2013.01);
Abstract

Seamless bonding layers in semiconductor packages and methods of forming the same are disclosed. In an embodiment, a method includes forming a second passivation layer over a first metal pad and a second metal pad, the first metal pad and the second metal pad being disposed over a first passivation layer of a first semiconductor die; depositing a first bonding material over the second passivation layer to form a first portion of a first bonding layer, wherein at least a portion of a seam in the first bonding layer is between the first metal pad and the second metal pad; thinning the first portion of the first bonding layer to create a first opening from the seam; and re-depositing the first bonding material to fill the first opening and to form a second portion of the first bonding layer.


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