The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Apr. 27, 2022
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Yoshinori Tanaka, Taichung, TW;

Wei-Che Chang, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 5/06 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); G11C 5/063 (2013.01); H01L 23/5283 (2013.01); H01L 23/53271 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H10B 12/053 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 12/488 (2023.02);
Abstract

A semiconductor structure includes a substrate, a trench, a first conductive layer, a second conductive layer, a third conductive layer, a source region and a drain region, a bit line contact, and a storage node contact. The trench is disposed in the substrate. The first conductive layer is disposed in the trench. The second conductive layer is disposed on a top surface of the first conductive layer. The third conductive layer is disposed on the top surface of the first conductive layer and is electrically connected to the second conductive layer. The source region and the drain region are disposed in the substrate and disposed on opposite sides of the first conductive layer. The bit line contact is disposed on one of the source region and the drain region, and the storage node contact is disposed on the other of the source region and the drain region.


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Tanaka, Yoshinori. (2025). Semiconductor structure including conductive layers contacting trench (U.S. Patent No. 12300612). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12300612

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