The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Jul. 28, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Osamu Koike, Yokohama, JP;
Yutaka Kadogawa, Yokohama, JP;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, active elements, first insulating film, an electrode pad, and a Through Silicon VIA electrode. The semiconductor substrate has an obverse surface and a reverse surface. The active elements define an element-absence area free of any of the active elements. The element-absence area includes a second insulating film, a ring-shaped dummy portion, and island-shaped dummy portions. The ring-shaped dummy portion and the island-shaped dummy portions are made of the same material as the semiconductor substrate. The ring-shaped dummy portion and the island-shaped dummy portions have top surfaces coplanar with a top surface of the second insulating film. The Through Silicon VIA electrode penetrates between an inner edge and an outer edge of the ring-shaped dummy portion from the reverse surface to the obverse surface. Some island-shaped dummy portions are disposed inside of the inner edge of the ring-shaped dummy portion.