The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Sep. 16, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Hao Chang, Hsinchu, TW;

Jia-Chuan You, Hsinchu, TW;

Li-Zhen Yu, Hsinchu, TW;

Lin-Yu Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10D 30/62 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H10D 30/6211 (2025.01); H10D 30/6219 (2025.01); H10D 62/151 (2025.01);
Abstract

A semiconductor device with reduced contact resistance is provided. The semiconductor device includes a substrate having a channel region and a source/drain region, a source/drain contact structure over the source/drain region, a conductive structure over the source/drain contact structure, an interlayer dielectric (ILD) layer surrounding the conductive structure and source/drain contact structure, a dielectric liner between the ILD layer and the conductive structure, and a diffusion barrier between the dielectric liner and the conductive structure.


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