The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Apr. 04, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Yun-Feng Kao, New Taipei, TW;

Katherine H. Chiang, New Taipei, TW;

Jyun-Yan Kuo, Hsinchu, TW;

Wei Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01H 1/00 (2006.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/1653 (2013.01); H01H 1/0094 (2013.01); H10B 61/00 (2023.02);
Abstract

A device structure includes a two-dimensional array of memory cells embedded in a memory-level dielectric layer and overlying a substrate; first access lines electrically connected to a respective row of memory cells within the two-dimensional array; and a first decoder circuit including first cantilever nanoelectromechanical devices that overlie the two-dimensional array of memory cells, are embedded in upper dielectric material layers, and have output nodes that are electrically connected to a respective first access line selected from the first access lines.


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