The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Jun. 29, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventor:
Yun-Yue Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/48 (2012.01); G03F 1/22 (2012.01); G03F 1/54 (2012.01); G03F 1/76 (2012.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
G03F 1/48 (2013.01); G03F 1/22 (2013.01); G03F 1/54 (2013.01); G03F 1/76 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01);
Abstract
A mask for extreme ultraviolet (EUV) lithography includes a multilayer (ML) stack including alternating metal and semiconductor layers disposed over a first surface of a mask substrate, a capping layer disposed over the ML stack, and an absorber layer disposed over the capping layer. An image pattern is formed in the absorber layer. A border layer surrounding the image pattern is disposed over the absorber layer.
Lin, Yun-Yue. (2025). Mask for euv lithography and method of manufacturing the same (U.S. Patent No. 12298662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12298662
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile