The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Nov. 10, 2021
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Olufemi I. Dosunmu, San Jose, CA (US);
Zhi Li, San Jose, CA (US);
Mengyuan Huang, Cupertino, CA (US);
Aliasghar Eftekhar, Fremont, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/136 (2006.01); G02B 6/12 (2006.01); H01L 31/0232 (2014.01); H01L 31/024 (2014.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G02B 6/12004 (2013.01); H01L 31/02327 (2013.01); H01L 31/024 (2013.01); H01L 31/028 (2013.01); H01L 31/1804 (2013.01); G02B 2006/12061 (2013.01);
Abstract
In one embodiment, an apparatus includes a substrate, an oxide layer on the substrate, a silicon layer on the oxide layer, which includes a waveguide region and etched regions adjacent to the waveguide region, a germanium layer on the silicon layer and adjacent the waveguide region of the silicon layer, and a resistive element adjacent to the germanium layer to provide heat to the germanium layer in response to a current applied to the resistive element.