The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Jun. 09, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Research & Business Foundation Sungkyunkwan University, Gyeonggi-Do, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Hyoungsub Kim, Seoul, KR;
Taejin Park, Yongin-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Hoijoon Kim, Daejeon, KR;
Wonsik Ahn, Bucheon-si, KR;
Mirine Leem, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Research & Business Foundation Sungyunkwan University, Gyeonggi-do, KR;
Abstract
Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.