The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Mar. 12, 2024
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Chia-Ching Hsu, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/35 (2022.12); H10D 30/01 (2024.12); H10D 30/69 (2024.12); H10D 64/01 (2024.12);
U.S. Cl.
CPC ...
H10B 43/35 (2023.01); H10D 30/0413 (2024.12); H10D 30/69 (2024.12); H10D 30/696 (2024.12); H10D 64/037 (2024.12);
Abstract

A silicon-oxide-nitride-oxide-silicon (SONOS) memory cell includes a memory gate disposed on a substrate, a dielectric layer and two charge trapping layers, wherein the dielectric layer is disposed between the substrate and the memory gate, and the two charge trapping layers are disposed at two opposite sides of the memory gate, wherein each of the charge trapping layers comprises an L-shape cross-sectional profile, and two selective gates disposed on the substrate, thereby constituting a two bit memory cell, wherein a top surface of each selective gate is higher than a top surface of the memory gate.


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Hsu, Chia-Ching. (2025). Silicon-oxide-nitride-oxide-silicon memory cell (U.S. Patent No. 12295144). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12295144

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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