The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

May. 18, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Yen-An Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0185 (2005.12); H03K 3/356 (2005.12); H03K 19/003 (2005.12);
U.S. Cl.
CPC ...
H03K 19/018521 (2012.12); H03K 3/356113 (2012.12); H03K 3/356182 (2012.12); H03K 19/00315 (2012.12);
Abstract

A semiconductor device and a method of operating the semiconductor device are disclosed. In one aspect, the semiconductor device includes a level shifting circuit configured to generate an output voltage in a second voltage domain corresponding to an input signal in a first voltage domain. The level shifting circuit includes a thick-oxide transistor and a thin-oxide transistor. The semiconductor device includes a bias generating circuit operatively coupled to the level shifting circuit and configured to generate a bias voltage substantially higher than a voltage of the input signal, and provide the bias voltage to a gate of the thick-oxide transistor, causing the level shifting circuit to generate the output voltage.


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