The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Aug. 25, 2023
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Santosh Sharma, Austin, TX (US);

Mei Yu Soh, Singapore, SG;

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/003 (2005.12); H03K 17/0412 (2005.12); H03K 17/06 (2005.12);
U.S. Cl.
CPC ...
H03K 19/00384 (2012.12); H03K 17/04123 (2012.12); H03K 2017/066 (2012.12); H03K 2217/0036 (2012.12);
Abstract

A circuit structure includes an enhancement mode transistor and a turn-off slew rate controller for automatically adding drain-source capacitance to the transistor when the transistor is transitioning to an off state. The added drain-source capacitance slows the turn-off slew rate (dV/dt_off) of the transistor without also increasing the turn-off energy loss (E_off). The slew rate controller can include: sensors connected to the drain region for sensing both the drain voltage and the slew rate, respectively; a logic circuit for generating and outputting an enable signal based on output voltages from the sensors; and a capacitance adder for adding to the drain-source capacitance only when the logic value of the enable signal indicates that the drain voltage is at or above a predetermined positive drain voltage level and the slew rate is positive.


Find Patent Forward Citations

Loading…