The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Jul. 27, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yuichiro Yamashita, Hsinchu, TW;

Chun-Hao Chuang, Hsinchu, TW;

Hirofumi Sumi, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2005.12);
U.S. Cl.
CPC ...
H01L 27/1464 (2012.12); H01L 27/1462 (2012.12); H01L 27/14623 (2012.12); H01L 27/1463 (2012.12); H01L 27/14638 (2012.12); H01L 27/14643 (2012.12); H01L 27/14689 (2012.12);
Abstract

Image sensor structures are provided. In some embodiments, an image sensor structure is provided. The image sensor structure includes a substrate and a light-sensing region formed in the substrate and extending from the top surface to the bottom surface of the substrate. The image sensor structure further includes a first isolation structure extending from the top surface of the substrate to a middle portion of the substrate and a second isolation structure formed extending from the bottom surface of the substrate to the middle portion of the substrate and in contact with the first isolation structure. The image sensor structure further includes a gate structure overlapping the light-sensing region, the first isolation structure, and the second isolation structure and a cap layer overlapping the gate structure, the light-sensing region, the first isolation structure, and the second isolation structure in a top view.


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