The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Jun. 14, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Yi-Jen Lo, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2005.12);
U.S. Cl.
CPC ...
H01L 24/08 (2012.12); H01L 24/06 (2012.12); H01L 24/80 (2012.12); H01L 2224/06517 (2012.12); H01L 2224/08145 (2012.12); H01L 2224/80895 (2012.12); H01L 2224/80896 (2012.12);
Abstract
A semiconductor structure and a method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a first semiconductor substrate, a first conductive pad, and a first hybrid bonding pad. The first conductive pad is over the first semiconductor substrate. The first hybrid bonding pad is on the first conductive pad. The first hybrid bonding pad includes nano-twins copper. A thickness of the first hybrid bonding pad is less than a thickness of the first conductive pad.