The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Nov. 06, 2023
Applicant:

Semiconductor Components Industries, Llc, Scottsdale, AZ (US);

Inventors:

Yusheng Lin, Phoenix, AZ (US);

Jerome Teysseyre, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2005.12); H01L 21/52 (2005.12); H01L 23/00 (2005.12); H01L 23/051 (2005.12); H01L 23/31 (2005.12); H01L 23/433 (2005.12); H01L 23/495 (2005.12); H01L 23/498 (2005.12); H01L 23/538 (2005.12); H01L 25/00 (2005.12); H01L 25/065 (2022.12); H01L 25/07 (2005.12); H01L 29/739 (2005.12); H01L 29/861 (2005.12);
U.S. Cl.
CPC ...
H01L 23/3735 (2012.12); H01L 21/52 (2012.12); H01L 23/3107 (2012.12); H01L 23/3114 (2012.12); H01L 23/3121 (2012.12); H01L 23/3135 (2012.12); H01L 23/4334 (2012.12); H01L 23/49822 (2012.12); H01L 24/20 (2012.12); H01L 25/0657 (2012.12); H01L 25/072 (2012.12); H01L 25/50 (2012.12); H01L 29/7393 (2012.12); H01L 29/861 (2012.12); H01L 2225/06589 (2012.12);
Abstract

In a general aspect, a package includes a semiconductor die disposed between a first high voltage isolation carrier and a second high voltage isolation carrier. The semiconductor die is thermally coupled to the first high voltage isolation carrier. The package also includes a molding material disposed in a space between the semiconductor die and the first high voltage isolation carrier, and a conductive spacer disposed between the semiconductor die and the second high voltage isolation carrier. The conductive spacer is thermally coupled to semiconductor die and to the second high voltage isolation carrier. A longitudinal dimension of the conductive spacer is greater than a longitudinal dimension of the semiconductor die. The molding material encapsulates the semiconductor die and the conductive spacer.


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