The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Aug. 24, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Koichi Kawai, Yokohama, JP;

Yoshihiko Kamata, Yokohama, JP;

Akira Goda, Tokyo, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2005.12); G11C 7/10 (2005.12); G11C 16/34 (2005.12); H03K 19/017 (2005.12);
U.S. Cl.
CPC ...
G11C 16/102 (2012.12); G11C 7/1048 (2012.12); G11C 16/3459 (2012.12); H03K 19/01742 (2012.12);
Abstract

Memories might include a controller configured to cause the memory to apply a first voltage level indicative of a data state of a memory cell of an array of memory cells to a control gate of a transistor, retain the first voltage level on the control gate of the transistor, connect a first source/drain of the transistor to a data line corresponding to the memory cell while applying a second voltage level to a second source/drain of the transistor and while retaining the first voltage level on the control gate of the transistor, and apply a programming pulse to a control gate of the memory cell while the data line is connected to the first source/drain of the transistor.


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