The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
May. 14, 2024
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Innocenzo Tortorelli, Cernusco Sul Naviglio, IT;
Mattia Boniardi, Cormano, IT;
Mattia Robustelli, Milan, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2005.12); G11C 16/08 (2005.12); G11C 16/24 (2005.12); G11C 16/26 (2005.12); G11C 11/56 (2005.12);
U.S. Cl.
CPC ...
G11C 16/10 (2012.12); G11C 16/08 (2012.12); G11C 16/24 (2012.12); G11C 16/26 (2012.12); G11C 11/5607 (2012.12);
Abstract
Methods, systems, and devices for programming techniques for polarity-based memory cells are described. A memory device may use a first type of write operation to program one or more memory cells to a first state and a second type of write operation to program one or more memory cells to a second state. Additionally or alternatively, a memory device may first attempt to use the first type of write operation to program one or more memory cells, and then may use the second type of write operation if the first attempt is unsuccessful.