The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Mar. 26, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Deping He, Boise, ID (US);

David Aaron Palmer, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2005.12); G06F 11/10 (2005.12); G06F 11/30 (2005.12); G06F 12/0811 (2015.12); G06F 12/0882 (2015.12); G06F 12/0891 (2015.12);
U.S. Cl.
CPC ...
G06F 12/0811 (2012.12); G06F 11/1068 (2012.12); G06F 11/3037 (2012.12); G06F 12/0882 (2012.12); G06F 12/0891 (2012.12);
Abstract

Methods, systems, and devices for enhanced data reliability in multi-level memory cells are described. For a write operation, a host device may identify a first set of data to be stored by a set of memory cells at a memory device. Based on a quantity of bits within the first set of data being less than a storage capacity of the set of memory cells, the host device may generate a second set of data and transmit a write command including the first and second sets of data to the memory device. For a read operation, the host device may receive a first set of data from the memory device in response to transmitting a read command. The memory device may extract a second set of data from the first set of data and validate a portion of the first set of data using the second set of data.


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