The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Nov. 28, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Csk Inc., Yongin-si, KR;
Seo Young Maeng, Seoul, KR;
Il Jun Jeon, Hwaseong-si, KR;
Su Ji Gim, Hwaseong-si, KR;
Jin Hong Kim, Yongin-si, KR;
Young Seok Roh, Suwon-si, KR;
Jong Yong Bae, Hwaseong-si, KR;
Jung Joon Pyeon, Hwaseong-si, KR;
Abstract
A method of fabricating a semiconductor device includes providing a wafer inside a process chamber, performing an ALD (atomic layer deposition) process inside the process chamber to deposit titanium nitride on the wafer, providing a process gas used for the ALD process to a scrubber, filtering a first powder contained in the process gas, using a filter unit disposed in the scrubber and including a plurality of filters, adsorbing a second powder remaining in the process gas after passing through the filter unit, using a fin structure extending in a vertical direction inside the filter unit, and exhausting the process gas, from which the first and second powders are removed, from the scrubber.