The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Apr. 17, 2024
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Venkata Mangathayaru Bollam, Singapore, SG;
Qiying Wong, Singapore, SG;
Yudi Setiawan, Singapore, SG;
Assignee:
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/00 (2024.12); H01L 23/48 (2005.12); H10D 1/47 (2024.12); H10D 1/68 (2024.12);
U.S. Cl.
CPC ...
H10D 84/206 (2024.12); H01L 23/481 (2012.12); H10D 1/474 (2024.12); H10D 1/711 (2024.12);
Abstract
A semiconductor device includes a dielectric layer over a back end of line (BEOL) metal layer, a metallic resistive layer over the dielectric layer, a resistor comprising a metallic resistive film that is a first portion of the metallic resistive layer, and a metal-insulator-metal (MIM) capacitor. The insulator of the MIM capacitor comprises at least two layers including a first layer that is a second portion of the metallic resistive layer and a second layer that is the dielectric layer.