The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Nov. 09, 2023
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Kwangsik Ko, Singapore, SG;

Qiuyi Xu, Singapore, SG;

Shajan Mathew, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2024.12); H01L 21/761 (2005.12); H01L 21/765 (2005.12); H10D 8/01 (2024.12); H10D 8/60 (2024.12); H10D 64/00 (2024.12);
U.S. Cl.
CPC ...
H10D 62/107 (2024.12); H01L 21/761 (2012.12); H01L 21/765 (2012.12); H10D 8/051 (2024.12); H10D 8/60 (2024.12); H10D 64/111 (2024.12);
Abstract

A device includes a buried oxide layer disposed on a substrate, a first region disposed on the buried oxide layer and a first ring region disposed in the first region. The first ring region includes a portion of a guardring. The device further includes a first terminal region disposed in the first ring region, a second ring region disposed in the first region and a second terminal region disposed in the second ring region. The first terminal region is connected to an anode and the second terminal region is connected to a cathode. The first region has a graded doping concentration. The first region, the second ring region and the second terminal region have a first conductivity type, and the first ring region and the first terminal region have a second conductivity type. The first conductivity type is different from the second conductivity type.


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