The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
May. 23, 2022
Applicant:
Sandisk Technologies, Inc., Milpitas, CA (US);
Inventors:
Peter Rabkin, Cupertino, CA (US);
Masaaki Higashitani, Cupertino, CA (US);
Assignee:
Sandisk Technologies, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2022.12); H10B 41/10 (2022.12); H10B 41/27 (2022.12); H10B 41/35 (2022.12); H10B 43/10 (2022.12); H10B 43/35 (2022.12);
U.S. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01);
Abstract
A memory device includes an alternating stack of insulating layers and control gate layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure containing a memory film and a vertical semiconductor channel located within the memory opening. The memory film includes a resonant tunneling barrier stack, a barrier layer, and a memory material layer located between the resonant tunneling barrier stack and the barrier layer. The barrier layer may be a dielectric blocking barrier layer.