The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Mar. 30, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Zong-Han Lin, Tainan, TW;
Yi-Han Ye, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2005.12); H01L 29/06 (2005.12); H01L 29/40 (2005.12); H01L 29/66 (2005.12);
U.S. Cl.
CPC ...
H01L 29/7816 (2012.12); H01L 29/0653 (2012.12); H01L 29/401 (2012.12); H01L 29/407 (2012.12); H01L 29/66681 (2012.12);
Abstract
A lateral diffusion metal oxide semiconductor (LDMOS) device includes a first fin-shaped structure on a substrate, a shallow trench isolation (STI) adjacent to the first fin-shaped structure, a first gate structure on the first fin-shaped structure, a spacer adjacent to the first gate structure, and a contact field plate adjacent to the first gate structure and directly on the STI. Preferably, a sidewall of the spacer is aligned with a sidewall of the first fin-shaped structure.