The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Jan. 24, 2024
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Wan-Yi Kao, Baoshan Township, TW;
Hung Cheng Lin, Hsinchu, TW;
Che-Hao Chang, Hsinchu, TW;
Yung-Cheng Lu, Hsinchu, TW;
Chi On Chui, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2005.12); H01L 21/02 (2005.12); H01L 29/06 (2005.12); H01L 29/423 (2005.12); H01L 29/49 (2005.12); H01L 29/786 (2005.12);
U.S. Cl.
CPC ...
H01L 29/66553 (2012.12); H01L 21/02167 (2012.12); H01L 21/02211 (2012.12); H01L 21/0228 (2012.12); H01L 21/02603 (2012.12); H01L 29/0673 (2012.12); H01L 29/42392 (2012.12); H01L 29/4983 (2012.12); H01L 29/66742 (2012.12); H01L 29/78696 (2012.12);
Abstract
Semiconductor devices and methods of manufacturing are presented in which inner spacers for nanostructures are manufactured. In embodiments a dielectric material is deposited for the inner spacer and then treated. The treatment may add material and cause an expansion in volume in order to close any seams that can interfere with subsequent processes.