The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Jun. 05, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Marcus Johannes Henricus Van Dal, Linden, BE;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A transistor includes a first conductive type channel layer, a second conductive type channel layer, a gate structure, first source/drain regions and second source/drain regions. The first conductive type channel layer includes a plurality of first nanosheets. The second conductive type channel layer includes a plurality of second nanosheets stacked over the first nanosheets. The gate structure wraps around each of the first nanosheets and the second nanosheets. The first source/drain regions are disposed on opposite sides of the first nanosheets. The second source/drain regions are disposed on opposite sides of the second nanosheets and electrically isolated from the first source/drain regions.