The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Aug. 09, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chen-Chi Huang, Hsinchu, TW;

Chang-Yao Huang, New Taipei, TW;

Po-Cheng Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2005.12); G03F 7/00 (2005.12);
U.S. Cl.
CPC ...
H01L 24/02 (2012.12); G03F 7/70925 (2012.12); H01L 24/03 (2012.12); H01L 24/04 (2012.12); H01L 24/05 (2012.12); H01L 24/11 (2012.12); H01L 24/13 (2012.12); H01L 2224/02141 (2012.12); H01L 2224/02145 (2012.12); H01L 2224/0215 (2012.12); H01L 2224/0362 (2012.12); H01L 2224/0401 (2012.12); H01L 2224/05569 (2012.12); H01L 2224/05573 (2012.12); H01L 2224/11462 (2012.12); H01L 2224/13005 (2012.12); H01L 2224/13147 (2012.12); H01L 2224/1357 (2012.12); H01L 2224/141 (2012.12); H01L 2924/07025 (2012.12); H01L 2924/2064 (2012.12); H01L 2924/20752 (2012.12); H01L 2924/20753 (2012.12); H01L 2924/20754 (2012.12);
Abstract

A structure includes a controlled polyimide profile. A method for forming such a structure includes depositing, on a substrate, a photoresist containing polyimide and performing a first anneal at a first temperature. The method further includes exposing the photoresist to a radiation source through a photomask having a pattern associated with a shape of a polyimide opening. The method further includes performing a second anneal at a second temperature and removing a portion of the photoresist to form the polyimide opening. The method further includes performing a third anneal at a third temperature and cleaning the polyimide opening by ashing.


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