The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Nov. 09, 2021
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Chun-Cheng Liao, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2005.12); H01L 21/768 (2005.12); H10B 12/00 (2022.12);
U.S. Cl.
CPC ...
H01L 23/53295 (2012.12); H01L 21/76805 (2012.12); H01L 21/76889 (2012.12); H01L 21/76895 (2012.12); H01L 23/53209 (2012.12); H01L 23/53219 (2012.12); H01L 23/53233 (2012.12); H01L 23/53242 (2012.12); H01L 23/53257 (2012.12); H10B 12/00 (2023.01);
Abstract
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first conductive plug disposed in the first dielectric layer, and a second conductive plug disposed in the second dielectric layer and directly over the first conductive plug. The semiconductor device structure further includes a silicide portion disposed between the first conductive plug and the second conductive plug.