The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Feb. 21, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shan Hu, Albany, NY (US);

Peter D'Elia, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2005.12); H01L 21/02 (2005.12); H01L 21/687 (2005.12);
U.S. Cl.
CPC ...
H01L 21/67051 (2012.12); H01L 21/02052 (2012.12); H01L 21/67034 (2012.12); H01L 21/68764 (2012.12);
Abstract

Improved puddle processes and methods are provided herein for retaining a processing liquid on a surface of a semiconductor substrate. More specifically, improved methods are provided herein for retaining a puddle within a center region of a semiconductor substrate while the substrate is stationary, or rotating at relatively low rotational speeds. In the disclosed embodiments, a puddle is retained within a center region of the semiconductor substrate by a thin film, which is deposited within a peripheral edge region of the substrate before a processing liquid is dispensed within the center region of the substrate to form the puddle.


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