The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Mar. 21, 2022
Applicant:

Nuflare Technology, Inc., Yokohama, JP;

Inventors:

Koichi Ishii, Kawasaki, JP;

Chosaku Noda, Yokohama, JP;

Assignee:

NuFlare Technology, Inc., Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/20 (2005.12); H01J 37/147 (2005.12); H01J 37/22 (2005.12); H01J 37/244 (2005.12); H01J 37/26 (2005.12);
U.S. Cl.
CPC ...
H01J 37/1477 (2012.12); H01J 37/1471 (2012.12); H01J 37/20 (2012.12); H01J 37/222 (2012.12); H01J 37/244 (2012.12); H01J 37/265 (2012.12); H01J 2237/2448 (2012.12); H01J 2237/2806 (2012.12);
Abstract

A multiple electron beam image acquisition method includes performing scanning with a representative secondary electron beam emitted, based on temporary secondary electron beam deflection conditions, for each of plural positions in a primary electron beam deflection range of a representative primary electron beam, acquiring plural coordinates corresponding to the plural positions, based on detected images of the representative secondary electron beam, each detected at any one of the plural positions in the primary electron beam deflection range of the representative primary electron beam, and calculating, using the plural coordinates acquired, secondary electron beam deflection conditions to cancel movement of the representative secondary electron beam due to movement of the representative primary electron beam in the primary electron beam deflection range of the representative primary electron beam and to fix the irradiation position of the representative secondary electron beam to the predetermined detection element.


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