The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Aug. 10, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Jingwen Lu, Hefei, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2022.12);
U.S. Cl.
CPC ...
H10B 12/315 (2023.01); H10B 12/03 (2023.01); H10B 12/033 (2023.01); H10B 12/0335 (2023.01);
Abstract

The disclosure relates to the technical field of semiconductors, and to a memory, a semiconductor structure and a method for same. The method includes: providing a substrate, the substrate including a plurality of conductive contact plugs in array distribution and insulation layers separating the conductive contact plugs; and forming a plurality of capacitive layers stacked and distributed in a direction perpendicular to the substrate on a surface of the substrate, each of the capacitive layers including a plurality of capacitances distributed at intervals, and the capacitances being respectively connected to different conductive contact plugs. According to the method, the storage capacity of capacitances can be increased, and product yield can be enhanced.


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